In the modern information society, data consumption is steadily increasing, and with the popularization of 5G communication, high-power power sources such as communication power supplies are facing strict requirements in terms of volume, weight, work efficiency, anti-interference performance, battery compatibility, standby energy consumption, and security.
    The reduction of the conduction resistance of HV MOS effectively improves the performance of communication switching power supplies. Lingxun has independently developed HV MOS using advanced multi-layer epitaxy and injection technology for high-power power supply and other applications. It has the leading domestic Rsp and FOM (QG * RDS (on)) and the fourth and fifth generation HV MOS optimized cell structure launched by Lingxun. At the same time, it also specially optimizes the transition zone and terminal design. Therefore, it has the characteristics of high current density, strong short-circuit ability, fast switching speed, and good usability, which can meet the high efficiency and reliability needs of customers. To achieve the stringent energy efficiency goals of high-power power supplies, CRM's synchronous rectification of medium and low voltage SGT MOS can be adopted. The SGT MOS of CRM is commonly used in fields such as switching power supplies, motor drives, and BMS. Choosing HV MOS from CRM in conjunction with SGT MOS can achieve high conversion efficiency, durability, and low system cost.

Application schematic diagram

Typical topology circuit diagram

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